- highly doped state
- сильнолегированное состояние
English-russian dictionary of physics. 2013.
highly doped state
Смотреть что такое "highly doped state" в других словарях:
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Power MOSFET — A Power MOSFET is a specific type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed to handle large power. Compared to the other power semiconductor devices (IGBT, Thyristor...), its main advantages are high commutation speed … Wikipedia
Ytterbium — Yb redirects here. For the unit of information, see Yottabit. thulium ← ytterbium → lutetium ↑ Yb ↓ No … Wikipedia
Semiconductor — Citations missing|date=March 2008A semiconductor is a solid material that has electrical conductivity in between a conductor and an insulator; it can vary over that wide range either permanently or dynamically. [. They are used in many… … Wikipedia
Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… … Wikipedia
Nuclear weapon design — The first nuclear weapons, though large, cumbersome and inefficient, provided the basic design building blocks of all future weapons. Here the Gadget device is prepared for the first nuclear test: Trinity. Nuclear weapon designs are physical,… … Wikipedia
Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… … Wikipedia
Institute for Laser Science — The Institute for Laser Science is a department of the University of Electro Communications, located near Tokyo, Japan.LocationThe Institute for Laser Science is located at 1 5 1 Chofugaoka, Chofu, Tokyo, 182 8585, Japan. The coordinates are (+35 … Wikipedia
Yttrium(III) oxide — IUPAC name Yttrium(III) oxide … Wikipedia
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
Laser — For other uses, see Laser (disambiguation). United States Air Force laser experiment … Wikipedia
